from a 2008 PHD paper's abstract...A novel chalcogenide material consisting of gallium, lanthanum and sulphur was shown, for the first time, to phase change. The crystallisation time of Ga:La:S:Cu material was found to be 150ns and dependent on the Cu proportion. Increasing the Cu by 30 at.% increased the crystallisation time to 350ns. The electrical resistivity of these materials was approximately 4Ωm. This allows efficient Joule heating and electrical switching was demonstrated. A finite element analysis has shown that this material can be amorphised with a current of just 0.4μA in comparison to 2.5mA required for a similar volume of Ge2Sb2Te5. Therefore Ga:La:S:Cu shows potential as a future electrical phase change data storage material.

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